| 摘要 |
A mask pattern of a positive type resist compsn. is formed with trimethylsilyl-nitrile. A first resist layer is formed on a wafer for planarizing the wafer surface, add then a second resist layer is formed. The second resist layer is selectively exposed to form a pattern in that layer, and exposed portions of the layer are removed to form a mask pattern in the portions of the layer. The resist compsn. comprises a photoactive resin having phenolic OH gps., a 5-50 wt.% trimethylsilil-nitrile and an organic solvent.
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