发明名称 PHASE-LOCK SEMICONDUCTOR ARRAY
摘要 PURPOSE:To change effective index distribution in a laser oscillation wavelength, and to make the gains of a fundamental super-mode larger than those of other super-modes by forming end-section disordering regions having refractive indices smaller than the refractive indices of disordering regions on the outsides of the disordering regions positioned at both striped end sections. CONSTITUTION:A plurality of disordering regions 31 are disposed into a superlattice optical guide 26 to a stripe shape. The disordering regions 31 are shaped by the disordering of a superlattice by implating the ions of Si as an impurity. End-section disordering regions 32 are formed near both end sections of the disordering regions 31 arranged to the stripe shape. This region 32 is doped with Si ions in concentration higher than the disordering regions 31 and promoted in disordering in the end-section disordering regions 31, and the refractive indices of the regions 32 are set so as to be made smaller than the refractive indices of the disordering regions 31. The disordering regions 31 and the end-section disordering regions 32 are brought to an N type by implanting Si ions, and an internal current constriction and an index waveguide mechanism are formed.
申请公布号 JPH02106986(A) 申请公布日期 1990.04.19
申请号 JP19880261020 申请日期 1988.10.17
申请人 OKI ELECTRIC IND CO LTD 发明人 FUKUNAGA TOSHIAKI;FURUKAWA RYOZO;HASHIMOTO AKIHIRO
分类号 H01S5/00;H01S5/12;H01S5/34;H01S5/40 主分类号 H01S5/00
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