发明名称 |
PLASMA-DEPOSITING INSULATION LAYER ON METAL AND THEN ELECTRODE BY SPUTTERING OR VAPORIZATION |
摘要 |
<p>A process for producing a continuous web of an insulated metalic substrate, comprising the steps of depositing an insulation layer on a continuous web of a metallic substrate by plasma CVD method or sputtering method, and depositing a back electrode on the insulation layer by sputtering method or vapor deposition method. According to the present invention, the insulated metalic substrate for a solar cell or printed circuit board can be produced in a continuous manner and in high productivity and quality.</p> |
申请公布号 |
CA1267864(A) |
申请公布日期 |
1990.04.17 |
申请号 |
CA19840468803 |
申请日期 |
1984.11.28 |
申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
NAKAYAMA, TAKEHISA;NISHIMURA, KUNIO;TSUGE, KAZUNORI;TAWADA, YOSHIHISA |
分类号 |
H05K3/44;C23C14/02;C23C14/56;C23C16/02;C23C16/54;H01L31/0392;H01L31/04;H01L31/18;H01L31/20;H05K1/05;(IPC1-7):C23C14/02 |
主分类号 |
H05K3/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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