| 摘要 |
PURPOSE:To manufacture an element having a characteristic according to a design by a method wherein an amount of an etching operation, using HCl gas, which is executed before an epitaxial growth operation is controlled in order to execute an accurate alignment operation. CONSTITUTION:After the surface of a 100 silicon wafer substrate 1 having a first cavity part 4 for alignment use has been etched by using HCl gas, an epitaxial growth operation by a CVD method is executed by using a raw gas; an epitaxial layer 5 having a second cavity part 6 corresponding to the first cavity part 4 is formed. During this process, an amount of an etching operation by the HCl gas is set at 5000Angstrom or lower. Accordingly, a deformation of the second cavity part 6 formed on the epitaxial layer 5 can be reduced to a small value. Thereby, an accurate alignment operation can be executed by using the second cavity part 6 as a mark even after the epitaxial growth operation; an IC having a good characteristic can be manufactured. |
