| 摘要 |
PURPOSE:To enable easy formation of an island-shaped single crystal Si film having a flat surface, by applying laser beams onto a polycrystalline Si film deposited on a substrate with grooves, and by applying thereafter resist-film coating and dry etching thereon. CONSTITUTION:A polycrystalline Si film 2 is deposited on a quartz glass substrate 1 with grooves made thereon. Next, laser beams are applied onto the film 2 to re-crystallize the same, and thereby a re-crystallized Si film 3 is formed. At this time, an oxide film is formed on the surface of the film 3. Then, this oxide film is removed, and thereafter the film 3 is coated with a resist film 4, whereby a virtually flat surface is obtained. Next, the film 4 and the film 3 are etched by dry etching, and finally the film 3 formed of single crystal grains is left inside the grooves formed on the substrate 1. As the result, the islet-shaped single crystal Si film 3 having excellent flatness is formed. |
