| 摘要 |
PURPOSE:To easily realize both products of high speed access type and low power consumption type without the design change of any circuit of a semiconductor memory device by a method wherein one of two power source pads is directly connected to an inner power wire and the other is connected to the inner power wire through the intermediary of a voltage dropping means. CONSTITUTION:Two power source pads 4 and 40 and a voltage dropping means 10 are provided onto a semiconductor chip 2, where the power source pad 4 is so arranged that it can be directly connected with an inner power wire 8 and the other pad 40 is also so arranged that it can be connected to the inner power wire 8 through the intermediary of the voltage dropping means 10. By this setup, when the power pad 4 is so wired as to be directly connected with the inner power wire 8 in an assembly process, a high speed semiconductor memory device can be obtained, and when the other power pad 40 is wired so as to be connected to the inner power wire 8 through the intermediary of the voltage dropping means 10 in the assembly process, the power voltage level inside the semiconductor chip can be made lower than an external power voltage level, so that the semiconductor can be remarkably decreased in power consumption. |
