| 摘要 |
PURPOSE:To obtain sufficient capacity of a capacitor and reliability even if the occupying area of a memory cell is reduced by forming an uneven part on the surface of an interlayer insulating film formed on the surface of a MOSFET near a storage node contact, and so reducing the thickness of the electrodes of a first capacitor formed on the upper layer in the degree as to reflect the uneven part of a base. CONSTITUTION:After a silicon oxide film 6b having about 2000 -3000Angstrom of thickness of the upper layer film of a MOSFET, a storage node contact 11 is formed, the film 6b of the periphery is selectively removed simultaneously to form an uneven part on its surface. The film 6 is etched until it arrives at a film 6a. A polycrystalline silicon film 7' having 800Angstrom of thickness is deposited on the whole surface, doped, and a first capacitor electrode 7 is then formed. The reduction in the surface area by the decrease in the thickness of the electrode 7 is compensated by the uneven part between the layers of a base to prevent the capacity of the capacitor from decreasing due to the reduction in the mounting surface are of the electrode 7. |
