| 摘要 |
<p>A semiconductor device having a built-in capacitor (22) comprises a substrate (21), an internal electrode (22a) provided on a top side of the substrate, a dielectric film (22b) provided so as to cover the internal electrode for establishing a predetermined capacitance, a surface electrode (22c) provided on the dielectric film so as to make a contact therewith, a plurality of through holes (31 - 34) formed in the substrate in correspondence to the internal electrode so as to extend from a bottom side to the top side, and a back-side electrode (24) provided on the bottom side of the substrate including the through holes so as to make a contact with the internal electrode through the through holes.</p> |
