发明名称 |
Semiconductor device |
摘要 |
A semiconductor device comprises a semiconductor chip having main power supply lines which are arranged in peripheral regions in the vicinity of edges of the semiconductor chip and which are formed with multi-level metallization. The main power supply lines are formed with arrangements in that layers of the same potential face each other through an insulating layer in chip corner regions adjacent to corners of the semiconductor chip. |
申请公布号 |
US4914503(A) |
申请公布日期 |
1990.04.03 |
申请号 |
US19870084056 |
申请日期 |
1987.08.11 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIRATO, TAKEHIDE;TAZUNOKI, TERUO |
分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/528 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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