发明名称 Semiconductor device
摘要 A semiconductor device comprises a semiconductor chip having main power supply lines which are arranged in peripheral regions in the vicinity of edges of the semiconductor chip and which are formed with multi-level metallization. The main power supply lines are formed with arrangements in that layers of the same potential face each other through an insulating layer in chip corner regions adjacent to corners of the semiconductor chip.
申请公布号 US4914503(A) 申请公布日期 1990.04.03
申请号 US19870084056 申请日期 1987.08.11
申请人 FUJITSU LIMITED 发明人 SHIRATO, TAKEHIDE;TAZUNOKI, TERUO
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/528 主分类号 H01L21/3205
代理机构 代理人
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