| 摘要 |
PURPOSE:To simplify manufacturing steps by connecting second conductivity type semiconductor control electrodes in contact with first conductivity type semiconductor of a light emitting element to which a bias voltage is applied therebetween by resistance elements. CONSTITUTION:Assume that a transfer clock phi3 shows a high level and a light emitting thyristor T(0) is turned ON. In this case, the base of an NPN transistor Tr 2 (0) is set to a potential at which ON current of the T(0) can flow, this potential is transmitted to the bases of NPN transistors Tr2(-1), Tr2(1) of the adjacent T(-1), T(1) through a connecting resistor RL, and the base currents flow. Next clock pulse phi1 of the pulse phi3 is applied to the T(1), T(-2). Since the ON voltages respectively attain the values of ON voltage Vs(1), Vs(-2), if the high level voltage of the clock pulse is set between the ON voltages Vs(1) and Vs(-2), only the T(1) can be turned ON. If the phi1, phi2, phi3 are so set as to be superposed at the high level, the ON state light emitting elements are sequentially transferred. Thus, the light emitting element arrays are connected therebetween by the resistor to simply manufacture it in simple manufacturing steps. |
