| 摘要 |
PURPOSE:To prevent a bonding wire from coming into contact with an edge of a cover film by a method wherein a semiconductor device is composed of a semiconductor substrate, an aluminum pad provided on the substrate through the intermediary of an insulating film and a cover film isolatedly formed from the periphery of the aluminum pad. CONSTITUTION:A silicon oxide film 2 is deposited by thermal oxidation on a silicon substrate 1 and then an aluminum pad is formed on the silicon oxide film. Then, a cover film 5a comprising plasma nitride film is isolatedly formed from the periphery of the aluminum pad 4. In order to form the cover film 5a, firstly the plasma nitride film is deposited on the whole surface of a wafer to be removed from the periphery of the aluminum pad 4 in larger diameter than that of the pad 4 using e.g., carbon tetrafluoride (CF4) plasma. At this time, the insulating film immediately below the aluminum pad 4 to be the silicon oxide film 2 can not be removed by said plasma. Consequently, any defect such as release, etc., of the aluminum pad 4 can be prevented from occurring. |
