| 摘要 |
PURPOSE:To obtain a minute resist pattern whose dimensions are equal to or slightly larger than dimensions of the pattern of a photomask by forming a monomolecular film on side walls of the minute resist pattern formed on a substrate to increase dimensions in the breadthwise direction of the minute resist pattern. CONSTITUTION:A minute resist pattern 4 is formed on a semiconductor substrate 1 by lithography. Dimensions LR in the breadthwise direction of the minute resist pattern are smaller than dimensions LM in the breadthwise direction of the pattern of the photomask. An LB film 6 as the monomolecular film is formed on the semiconductor substrate 1 including the minute resist pattern 4 by the Langmuir-Blodgette's technique and the film 6 is etched with reactive ions 7 to remove the LB film 6 stuck to the surface of the semiconductor substrate 1. At this time, the LB film formed on side walls of the minute resist pattern 4 remains through the LB film formed on the top of the minute resist pattern 4 is removed. Thus, the minute resist pattern whose dimensions are equal to or slightly larger than dimensions of the pattern of the photomask is obtained. |
