| 摘要 |
PURPOSE:To prevent a displacement of exposed patterns at each exposure by a method wherein a position displacement of a pattern on a wafer is corrected and a discrepancy of a reduction magnification of the pattern is corrected. CONSTITUTION:An operation to correct a position displacement is executed by a conventional method. Coordinates of marks 1 for reduction magnification measurement use in a diagonal line are measured; distances A and B of two points in a horizontal direction and a vertical direction are found. Then, the distances of A and B are compared with distances as respective reference values according to a design; it is judged whether there exists a difference or not; if there exists the difference, magnification discrepancies of DELTAA and DELTAB are calculated. Then, the amounts of DELTAA and DELTAB are converted into a magnitude of atmospheric pressure; this converted atmospheric pressure is made equal to a pressure of a chamber between projection lenses; a refractive index of light is changed; thereby, the magnification discrepancies are corrected. The reduction magnifications may be corrected while, e.g., a global alignment mark 2 and a TTL alignment mark 3 are used, instead of the marks 1 for reduction magnification measurement use, as marks for reduction magnification measurement use, and their XY coordinates are measured. |
