| 发明名称 |
METHODS OF FABRICATING N-TYPE AND-P-TYPE MICROCRYSTALLINE SEMICONDUCTOR ALLOY MATERIALS |
| 摘要 |
<p>A method of fabricating p-type and n-type microcrystalline semiconductor alloy material (16) which includes a band gap widening element, said method including an a.c. glow discharge deposition without the use of a magnetic field of sufficient strength to induce electron cyclotron resonance.</p> |
| 申请公布号 |
EP0301686(A3) |
申请公布日期 |
1990.03.28 |
| 申请号 |
EP19880304219 |
申请日期 |
1988.05.10 |
| 申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
GUHA, SUBHENDU;OVSHINSKY, STANFORD R. |
| 分类号 |
H01L31/04;H01L21/205;H01L29/30;H01L31/0368;H01L31/075;H01L31/20;(IPC1-7):H01L21/205 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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