| 摘要 |
<p>PURPOSE:To stabilize contrast at all times by excessively raising the threshold value once in a positive direction, then impressing a prescribed negative voltage to a gate for a prescribed period of time to return the threshold in a negative direction and moving the threshold to the positive direction as compared to the initial value. CONSTITUTION:Electrons are trapped in the deep energy level in the gate SiNx of the thin-film transistor when the prescribed positive voltage with respect to the source and drain thereof is impressed for a prescribed period of time to the gate SiNx and a threshold value is excessively raised once in a positive direction. The electrons trapped in the deep energy level in the SiNx, therefore, remain without moving even if the prescribed negative voltage is impressed for a prescribed period of time to the same gate thereafter and the threshold value is returned in the negative direction. The stability of the threshold value is consequently improved. The contrast is stabilized at all times in this way.</p> |
