STADIO AD ALTA RESISTENZA D'USCITA IN TECNOLOGIA MOS,PARTICOLARMENTE PER CIRCUITI INTEGRATI,申请号IT19880019991-传众专利搜索

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发明名称	STADIO AD ALTA RESISTENZA D'USCITA IN TECNOLOGIA MOS,PARTICOLARMENTE PER CIRCUITI INTEGRATI
摘要
申请公布号	IT1217373(B)	申请公布日期	1990.03.22
申请号	IT19880019991	申请日期	1988.03.28
申请人	SGS THOMSON MICROELECTRONICS S.P.A.	发明人	DEVECCHI DANIELE;TORELLI GUIDO
分类号	H03F1/22;H03F3/345	主分类号	H03F1/22
代理机构		代理人
主权项
地址

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