A semiconductor laser device.

摘要

A semiconductor laser device which comprises a semiconductor substrate (11), a striped mesa disposed on the substrate and having an active layer (13) for laser oscillation, a current injection layer (15) disposed on the striped mesa and having a width (w) smaller than that (W) of the striped mesa, and a burying layer (18) disposed on both sides of the current injection layer (15) so as to come into contact with the side walls of the current injection layer (15), the burying layer (18) being capable of absorbing laser light produce in the active layer (13) and of preventing current from flowing through the outside of the striped mesa.