| 摘要 |
<p>PURPOSE:To obtain a preferable ohmic contact by forming a silicide layer on the part contacted with Si and forming a high melting point metal nitrided layer thereon. CONSTITUTION:A thermally oxidized film 12 is formed on a p type Si substrate 11, the part to become a diffused layer region is then opened, and a thermally oxidized film 13 is then formed thereon. Subsequently, ions are implanted through the film 13, thereby forming an n<+> type diffused layer 14. Then, a contacting hole 15 is opened, and a molybdenum film 16 and a nitrided titanium film 18 are formed. The film 18 is formed to decrease the wiring resistance, and a TiN film may be used therefor. The film 16 is affected by the high temperature heat treatment in the step of manufacturing a transistor later, and the part which is contacted with the layer 14 becomes a molybdenum silicide film 19.</p> |
