| 摘要 |
<p>PURPOSE:To form an additional capacity with a high yield by forming an additional capacity use electrode to a ladder-like pattern shape, and providing redundancy against a disconnection. CONSTITUTION:An additional capacity use electrode 3 whose material is the same as that of an electrode of a thin film transistor is formed between an insulated wire substrate 1 and a picture element electrode 10, and the shape of the additional capacity use electrode 3 is formed to a ladder-like pattern and allowed to have redundancy against a disconnection. Accordingly, minute irregularity of a defective substrate caused by the substrate or a disconnection caused by a defect of a film formed layer of the lower part can also be prevented easily. In such a way, a picture element potential holding characteristic is improved, and also, the deterioration of a yield caused by a fact that a Cs electrode is added can be suppressed to the minimum by a shape of its Cs electrode. Moreover, at the time of developing a large-sized liquid crystal display device in the future, as well, it can be manufactured with a high yield.</p> |
