发明名称 DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR ARRAY LASER
摘要 PURPOSE:To enable the stable oscillation of laser rays of different wavelengths with the same diffraction grating by a method wherein a laser is formed to have such a structure that the distance between the diffraction grating and an active layer is made to vary for every oscillating wavelength. CONSTITUTION:A buffer layer 2 and a lower clad layer 3 are formed on a substrate 1, and a first optical guide layer 5 and a second optical guide layer 6 are successively formed thereon in this order. At this point, a growth is made to stop once, and a wet etching is executed to remove a part of the second optical guide layer 6. Next, a dual light flux interference light exposure is performed to form diffraction gratings taking advantage of a secondary diffraction, where a diffraction grating 7 is formed primarily on the second optical guide layer 6 and a diffraction grating 8 is formed primarily on the first optical guide layer 5 and the pitch difference between the bottom and the top of the diffraction grating is made to be, for instance, 1000Angstrom . An upper clad layer 9 and a contact layer 10 are formed thereon, and the contact layer 10 and the clad layer 9 are partially processed to form an optical wave guide for the formation of a ridged type laser.
申请公布号 JPH0271573(A) 申请公布日期 1990.03.12
申请号 JP19880221345 申请日期 1988.09.06
申请人 CANON INC 发明人 MIYAZAWA SEIICHI
分类号 H01S3/23;H01S3/06;H01S5/00;H01S5/12;H01S5/40 主分类号 H01S3/23
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