| 摘要 |
PURPOSE:To obtain a photoconductive substance having a specified X-ray diffraction peak and being highly sensitive to near-infrared rays for semiconductor lasers by treating bis(tripropylsiloxy) silicon naphthalocyanine by evaporation in gas. CONSTITUTION:Bis(tripropylsiloxy)silicon naphthalocyanine is treated by evaporation in gas to produce bis(tripropylsiloxy)silicon naphthalocyanine having strong diffraction peaks at Bragg angles of 8.3 deg., 10.5 deg., 20.2 deg., 23.2 deg., 25.5 deg. and 30.0 deg. in an X-ray diffraction pattern. The compound having the above X-ray diffraction peaks is featured by showing high sensitivity to a wavelength of about 80nm, so that it can exhibit an excellent effect for, especially, a laser beam printer. |
