| 摘要 |
A high voltage transistor breakdown protection circuit (28) comprising: protecting means (40) having a first and a second input; protection control means (34) coupled to said first and second inputs of said protecting means to apply first and second signals thereto, said protecting means (40) assuming a protecting or a non-protecting mode in dependence on said protection control means (34) applying to said first and second inputs first and second combinations of said first and second signals, characterised by, said protecting means being arranged to assume a third mode and a fourth mode in dependence on said protection control means applying to said first and second inputs third and fourth combinations of said first and second signals. |
