| 摘要 |
<p>PURPOSE:To detect acceleration, contact pressure, atmospheric pressure and mechanical vibration at high sensitivity with a simple structure, by providing a compound semiconductor FET which is formed at a part where a variable member is deformed. CONSTITUTION:In an acceleration detecting sensor, a crystal growing layer 2 comprising, e.g. GaAs, is epitaxially grown on a semiconductor substrate 1 comprising, e.g. Si. A part A of the substrate 1 is removed by etching. The compressing side in the Figure is a cantilever 3 as a variable member. A Schottky gate (MES) FET is formed at the layer 2 at the end part. Thus a stress detecting FET 4 is formed. A signal processing circuit 5 which performs amplification and the like for the detected signal is formed on the layer 2 at the supporting side of the cantilever 3. When acceleration is applied in the direction of an arrow G, the part A of the layer 2 is bent. Therefore the threshold value of the FET 4 is changed, and the acceleration is detected.</p> |
