| 发明名称 |
Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions |
| 摘要 |
|
| 申请公布号 |
US4906595(A) |
申请公布日期 |
1990.03.06 |
| 申请号 |
US19890388294 |
申请日期 |
1989.07.21 |
| 申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
VAN DER PLAS, PAULUS A.;SNELS, WILHELMINA C. E. |
| 分类号 |
H01L21/31;H01L21/316;H01L21/32;H01L21/76;H01L21/762 |
主分类号 |
H01L21/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
