| 摘要 |
A CMOSLSI is disclosed which includes a semiconductor body, a first N-well region formed in the semiconductor body, a second N-well region, a greater part of which is formed in the first N-well region, a first P-well region formed in the semi-conductor body, a second P-well region, a greater part of which is formed in the first P-well region, a P-channel MOS transistor formed in the second N-well region, and an N-channel MOS transistor formed in the second P-well region, to reduce the distance between the P-channel MOS transistor and the N-channel MOS transistor, thereby increasing the packing density of the CMOSLSI.
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