| 摘要 |
PURPOSE:To prevent the stress change from occurring even when any beam source in high intensity is applied by a method wherein a BN film subjected to specific value of tensile stress previously imposed by plasma CVD process is irradiated with energy source of SOR or EB to provide the tensile stress with the specific value. CONSTITUTION:The residual tensile stress of an BN film to be formed is adjusted within the range of 1X10<9>-10<10>dyne/cm<2>. As for the optimized reaction requirements, it is recommended that temperature of 200-500 deg.C, pressure of 0.5-5Torr and RF power (high-frequency output) 50-300 watt are to be specified. Thus, the BN film 0.5-10mum thick is formed. Next, this BN film is irradiated with 1-500MJ/cm<2> of SOR or EB to forcibly cause the stress change. That is, the BN film formed by this plasma CVD is irradiated with the energy of 1-500-MJ/cm<2> so that the tensile stress change may be saturated within the specified range of 1X10<8>-2X10<9> dyne/cm<2> to be stopped. In this BN film, the stress change is hardly caused even if the BN film is later irradiated with any energy exceeding 500MJ/cm<2> with said tensile stress kept within the range not exceeding + or -2X10<8>dyne/cm<2>. |
