发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>The ultra high speed semiconductor integrated circuit device has transmission line on insulating plate with required characteristics using set spacing between ground and signal conductor. A wiring board (26) is formed as a sapphire plate (28) which is mounted above a chip (22) in a respective cavity (50) of the IC package (21). The signal lines (29) are formed on the bottom of the board which is arranged at a predetermined spacing of between thirty and fifty microns from the top of the chip. Pads (25) on the chip are connected by ball bonding or flip tip bonding with projection leads from the signal line. Alterntively, the plate is formed with conductors on its upper and lower surfaces.</p>
申请公布号 KR900001273(B1) 申请公布日期 1990.03.05
申请号 KR19840007835 申请日期 1984.12.11
申请人 FUJITSU CO. LTD. 发明人 HUKUDA MATSUMI;NARIDA HISADOSI
分类号 H01L21/60;H01L23/498;H01L23/66;(IPC1-7):H01L21/60 主分类号 H01L21/60
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