| 摘要 |
PURPOSE:To reduce electric field strength to be imposed on a capacitor dielectric film by a method wherein a cell plate is separated from a substrate due to a p-n junction and potential different from substrate potential is given to the cell plate. CONSTITUTION:The n-type impurities 19 working as a first region of a capacitor cell plate are formed on the side wall and the base of a groove 16 formed on a p-type semiconductor substrate 1. In the inside of a groove 16, a pair of capacitor storage nodes 2a consisting of polysilicon, whose surfaces are covered with capacitor dielectric films 7a and 8a of silicon oxide, are arranged along the side wall of the groove being mutually faced. Across a pair of storage nodes inside the groove 16, a polysilicon region 3a working as a second region of the cell plate is arranged and this is connected to the first region 19 of the cell plate on the base of the groove 16. Since the cell plates 3a and 19 are separated from the substrate 1 by p-n junction, potential different from the substrate potential can be impressed on the cell plates. |
