| 摘要 |
<p>A semi-conductor device has an internal circuit incorporating an N-channel MOS transistor (105) and a peripheral circuit including an N-channel MOS transistor (106). A drain diffusion layer (109) of the transistor (106) of the peripheral circuit has a phosphorus concentration which is higher than the phosphorus concentration of a drain diffusion layer (108) of the transistor (105) of the internal circuit.</p> |
