| 摘要 |
<p>PURPOSE:To decrease difference in thickness of a film deposited on wafers due to difference in temperature between upper and lower regions within a reaction chamber or due to difference in flowing direction of reaction gas by providing a vertical reduced-pressure CVD apparatus having a reaction furnace mounted vertically with a mechanism for moving a wafer holding board vertically in a process of vapor growth. CONSTITUTION:In a vertical reduced-pressure CVD apparatus having a reaction furnace mounted vertically, wafers 1 are held by a wafer holding board 2 which is inserted in a reaction chamber 3 from the bottom. The reaction chamber 3 is covered with a pair of quartz tubes, namely inner and outer quartz tube 4 and 5, which are surrounded by a heating cylindrical heater 6. Reaction gas is introduced from a reaction gas inlet pipe 7, passed between the wafers 1 and discharged through gaps of the inner quartz tube 4. The reaction gas then flows downwards through a space between the inner and outer tubes 4 and 5 and is discharged from an exhaust port 8. The wafer holding board 2 is mounted on a mechanism 9 for moving the wafer holding board vertically, so that the wafer holding board 2 is rotated by rotation of a ball shaft 10 to either direction as it is moved vertically by the mechanism 9.</p> |
