Formation of large grain polycrystalline films

摘要

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.