发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the adhesive property between an underlying material layer and a photoresist by bringing a specific compd. into reaction with the surface of the underlying material layer, thereby executing the surface treatment thereof. CONSTITUTION:The surface treatment of the underlying material such as silicon substrate is executed by bringing the vapor of a silane coupling agent having an arom. ring, for example, dimethyl phenyl chlorosilane 2 into reaction on a silicon oxide film 1 on the surface of the above-mentioned material. A photoresist film is then formed on this surface and is subjected to exposing and development processing to form fine patterns. The similar processing with a substrate having no oxide film 1 is possible as well.
申请公布号 JPH0258062(A) 申请公布日期 1990.02.27
申请号 JP19880209993 申请日期 1988.08.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAGUCHI ATSUMI
分类号 G03F7/075;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/075
代理机构 代理人
主权项
地址