IMPURITY DIFFUSION OF SEMICONDUCTOR LAYER,申请号JP19880205006-传众专利搜索

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发明名称	IMPURITY DIFFUSION OF SEMICONDUCTOR LAYER
摘要
申请公布号	JPH0254522(A)	申请公布日期	1990.02.23
申请号	JP19880205006	申请日期	1988.08.18
申请人	FUJI ELECTRIC CO LTD	发明人	TSUCHIYA KAZUHIRO
分类号	H01L29/73;H01L21/265;H01L21/329;H01L21/331;H01L21/336;H01L21/8238;H01L27/092;H01L29/732;H01L29/78	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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