| 摘要 |
PURPOSE:To form an amorphous semiconductor device on a thick-film IC substrate without exfoliating a thick film by forming an amorphous semiconductor layer by previously protecting a thick-film circuit by a metallic film on the formation of the amorphous semiconductor layer and removing the metallic film after the layer is attached. CONSTITUTION:Au layers 2, an insulating glass layer 3 and an Au layer 4 are printed and baked selectively onto a seramic substrate 1, thus forming a thick- film control circuit. A lower electrode 5 by a Cr evaporated film and a protective film 9 for the thick-film control circuit are formed, and the lower electrode 5 is connected to the thick-film control circuit. A metallic plate 6 is placed, and a hydrogenated amorphous Si layer 7 is deposited selectively through a plasma CVD method. When the metallic plate 6 is removed, the protective film 9 is taken away through etching and an ITO electrode 8 is formed selectively, a device consisting of a solid-state image pick-up element section 7 and a thick-film control section is obtained. In such constitution, the thick-film circuit has very excellent adhesive properties with the substrate and is stabilized secularly, a thick- film is not exfoliated even on a bonding operation on the circuit, and yield on mounting is improved. |
