发明名称 Preservation of surface features on semiconductor surfaces
摘要 The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors are preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru or Rh). DFP-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.
申请公布号 US4902644(A) 申请公布日期 1990.02.20
申请号 US19880260842 申请日期 1988.10.21
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY AT&T BELL LABORATORIES 发明人 WILT, DANIEL P.
分类号 H01L21/20;H01L21/208;H01L21/324;H01L33/00;H01S5/028;H01S5/12;H01S5/227;H01S5/323 主分类号 H01L21/20
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