| 摘要 |
PURPOSE:To facilitate manufacture of a surface emission type semiconductor laser having an internal current constriction structure with a few number of growth processes and, further, reduce its element resistance by building up a cladding layer with a conductivity type the same as that of a GaAs substrate, an active layer, a cladding layer with a conductivity type opposite to that of the GaAs substrate and a cap layer on the upper surface of a blocking layer in this order. CONSTITUTION:Double-hetero layers, i.e., an N-type Ga0.6Al0.4As cladding layer 4, a P-type Ga0.9Al0.1As active layer 5, a P-type Ga0.6Al0.4As cladding layer 6 and a P-type Ga0.85Al0.15As cap layer 7 are built up on the upper surface of a P-type Ga0.6 Al0.4As blocking layer 3 including a region removed by melting back in this order. Finally, an N-type GaAs substrate 10 is partially etched and reflective mirrors 9 and 9 are formed on the etched surface of the substrate 10 and on the part of the upper surface of the P-type Ga0.85Al0.15As cap layer 7 corresponding to the etched part of the N-type GaAs substrate 10. Further, electrodes 8 and 8 are formed on the unetched part of the lower surface of the N-type GaAs substrate 10 and on the part of the upper surface of the P-type Ga0.85Al0.15As cap layer 7 where the reflective mirror 9 is not formed to obtain a surface emission type semiconductor laser. |
