| 摘要 |
PURPOSE:To obtain an evaporation source for forming thin film having superior heating efficiency and free from contamination of impurities into an external atmosphere by providing an intermediate layer formed of a material having a thermal conductivity higher than that of a material constituting an internal layer in contact with an evaporation material between the internal layer and an external layer. CONSTITUTION:An evaporation source for forming thin film in which an evaporation material 41, such as Si, is held and the vapor of the evaporation material 41 is allowed to blow out through a small hole 51 of a cap 12 so as to be vapor-deposited on a base material, etc., is constituted ot a three-layer structure consisting of a crucible internal layer 11, an intermediate layer 21, and an external layer 31. Further, it is preferable to constitute the above internal layer 11 and external layer 31 of the same material and to use a refractory material consisting of one kind among Ta, Nb, Mo, W, Re, and alloys thereof. Moreover, the above intermediate layer 21 is constituted of a material having a thermal conductivity higher than that of a material constituting the internal layer 11 in contact with the evaporation material 41, and one kind among diamond C, BN, TaC, NbC, Mo2C, WC, ReC, etc., is suitably used as the material for the above intermediate layer 21. By this method, the evaporation source having superior heating efficiency and free from the contamination of the intermediate layer 21 as an impurity into the external atmosphere can be obtained. |
