| 摘要 |
PURPOSE:To form a thick conductor wiring of low resistance readily by forming a first metal layer by one kind of metal layer among Ti, Ni-Cr and Cr and a Cu layer and by forming an uppermost layer of a second metal layer by Au. CONSTITUTION:A Ti layer 2 and a Cu layer 3 are formed on a ceramics substrate 1 through sputtering or evaporation. In addition to Ti, Ni-Cr, Cr, etc., can be used. A Cu layer 5 and an Au layer 6 are formed on the Cu 3 through electrolytic plating using a resist 4 as a mask. After the resist 4 is removed, the exposed Cu layer 3 and the Ti layer 2 which are foundation metal layers are eliminated through etching, and a conductor layer consisting of the Ti layer 2, the Cu layer 3, the Cu layer 5, and the Au layer 6 is formed. Deterioration of the conductor layer caused by etching can be prevented by making the Au layer 6 the uppermost layer. A thick conductor wiring of low resistance can be readily formed in this way. |
