| 摘要 |
A method for defect detection includes: (i) scanning at least one wafer by a monitoring system and providing defect size information for each defect that belongs to a group of defects; (ii) scanning the at least one wafer by a wafer inspection system that includes multiple detectors and providing a set of defect detection signals for each defect of the group, wherein the wafer inspection system is characterized by lower resolution than the monitoring system; (iii) classifying the defects to defect classes; (iv) determining multiple relationships between defect types, defect sizes and sets of detection signals; (v) scanning a second wafer by the wafer inspection tool; and (vi) generating, for multiple defects, second wafer defect size information in response to the determined relationships and in response to multiple sets of detection signals generated during the scanning of the second wafer.
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