| 摘要 |
<p>PURPOSE:To prevent occurrences of conductive foreign substances and hinder the development of cracks when a dicing process is performed by coating a scribe line region with the second and third insulating films and a passivation film. CONSTITUTION:A semiconductor device is formed by making a LOCOS oxide film 2 which is formed on a semiconductor substrate 1 act as the first insulating film. In such a case, scribe line regions 11 are coated with the second and third insulating films 4 and 6 and a passivation film 8. No bases which are formed below various patterns of a gate electrode, the first and second conduction wiring layers 5 and 7 are scooped out by photoetching in an after-treatment process. Such a superior state of the scribe line regions prevents occurrences of conductive foreign substances which give rise to inferior reliability and binder the development of cracks when a dicing process is performed.</p> |
