METHOD FOR DISCONNECTING INTERCONNECTION USING FOCUSED ION BEAM

摘要

A method of disconnecting an interconnection (43) using a focused ion beam. A portion to be disconnected of an interconnection formed on a semiconductor substrate (41) to connect semiconductor elements formed in the substrate is aligned with an ion beam irradiating location, and a focused ion beam generated from a focused ion beam source is irradiated onto the interconnection to etch the interconnection by sputtering so that the interconnection is disconnected.