| 摘要 |
PURPOSE:To form an Si layer or an Si-rich SiC layer in the surface of an SiC sintered body and to enhance the bonding strength to the sintered body by feeding a substance which reacts readily with C but reacts hardly with Si to the surface of the sintered body heated to a high temp., allowing the substance to react with C in the surface and removing a reaction product.. CONSTITUTION:An SiC sintered body is heated to about 1,600-2,500 deg.C at which part of the sintered body is decomposed into Si and C. A substance which reacts readily with C but reacts hardly with Si, e.g., CO2 or H2 is fed to the surface of the sintered body and allowed to react with C in the surface. A reaction product is removed from the surface of the sintered body in the form of gaseous CO, etc. |
