METHOD OF EPITAXIAL LAYERS DOPING BY PHOSPHIDE INDIUM,申请号CS19860007624-传众专利搜索

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发明名称	METHOD OF EPITAXIAL LAYERS DOPING BY PHOSPHIDE INDIUM
摘要
申请公布号	CS267808(B1)	申请公布日期	1990.02.12
申请号	CS19860007624	申请日期	1986.10.22
申请人	HNILICKA KAREL ING.,CS;HLADINA RUDOLF ING.,CS	发明人	HNILICKA KAREL ING.,CS;HLADINA RUDOLF ING.,CS
分类号	H01L21/205;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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