| 摘要 |
PURPOSE: To form emitter stripe regions of about 0.1μm by growing an opposite conductivity type epitaxial layer on one conductivity type semiconductor substrate, forming base regions intruding into the substrate and emitter regions located in the epitaxial layer, covering the entire surface with a mask and forming windows for the emitter regions. CONSTITUTION: On an n<-> type Si substrate 12 is grown a p<++> type layer 18. Polycrystalline regions 22 at both ends of the layer 18 and isolation regions 16 intruding into the substrate 12 form mesa parts 14 of the substrate laminate. P<+> type base regions 21 intruded into the substrate 12 and n<+> type emitter regions 54 involved in the layer 18 above the regions 21 are formed by diffusion in the center of the mesa laminate. A p<++> type layer 34 for masking the entire surface, including them is epitaxially grown. Openings 44 are bored corresponding to the regions 54, the inner walls of the openings 44 are insulated by insulation elements 30 and thermal oxide layer 42 and conductive polycrystals 52 are buried therein, and emitter-contact layer 56 is formed on this surface, thus defining emitter windows by the layer 34 openings.
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