| 摘要 |
PURPOSE:To prevent any corrosion on an aluminum pad or an in-chip lead and the like by coating with a silicon nitride film not only on a surface of a semiconductor chip but at least on the vicinity of a pad of a metal fine wire bonded to the wire bonding pad. CONSTITUTION:Metal wire bonding is executed between an aluminum pad 38 of a chip 26 disposed in close contact with a die 28 and a stem 35 of the same, and a chip 26 surface, a pad 38 surface, and a wire surface are coated with a silicon nitride film 30. After the silicon nitride film was formed, the resulting chip is sealed with epoxy mold 36, and a vent hole 50 is provided through a die pad on the lower portion of the same. Hereby, any corrosion can be prevented even under invasion of water along the wire 27 surface. |
