| 摘要 |
PURPOSE:To enable a desirable pattern to be formed without accumulating excess nitrogen in an interface between a substrate and a photoresist at the time of exposure by forming the resist on the substrate so as to render the content of a photosensitive agent near the interlayer lowest in the resist. CONSTITUTION:The photoresist 8 is formed on the substrate 1 so as to render the content of a photosensitive agent near the interlayer lowest in the resist in the first process and the resist 8 is exposed and developed to form the desired pattern in the second process, thus permitting nitrogen not to be produced in excess near the interlayer between the substrate 1 and the resist 8 due to the lowest content of the agent, consequently, the resist 8 not to rise and no to cause shearing like the conventional cases, and a desired pattern to be obtained by development. |
