| 摘要 |
<p>PURPOSE:To prevent the development of abnormal undercut and stripping of a residual piece by putting an intermediate film on top of an insulating film so that both end faces of the above films coincide with a part which is at a prescribed distance from the center of a scribe line on a semiconductor substrate. CONSTITUTION:An insulating film 12 formed after it grows in such a way that it is at a prescribed distance from the center (0) of a scribe line on a semiconductor substrate 11 and an intermediate film 13 having an end face which coincides with an end face of the insulating film 12 is formed on the insulating film 12. After that, an interlayer film 14 is formed on the surface of the insulating film 12 and the intermediate film 13 so that the film 14 may cover the above two films and then, a passivation film 15 is formed so that it is laminated on the above film 14. Surplus undercut of the substrate is prevented by forming the above films 12 and 13 so that both end faces of the films 12 and 13 coincide with the part which is at the prescribed distance from the center (0) of the scribed line on the substrate 11; besides, stripping of residual pieces (the rest of the film) in the stepped parts in the case of etching is prevented.</p> |
