| 摘要 |
PURPOSE:To prevent the loss and removal of silicon single crystal and impurity diffused layers from occurring by a method wherein semiconductor wafers having impurity diffused layers on both surfaces thereof are divided into two parts for enabling impurity nondiffused layers to be formed without performing the grinding operation at all. CONSTITUTION:Orifla parts 1a with multiple semiconductor wafers 1 having impurity diffused layers 2 on both surfaces formed on the peripheral parts thereof are bonded onto a patch 3 to be laminated in the axial direction; the parts extending from the peripheral surface of the semiconductor material 4 to couple the semiconductor wafers with one another for constituting a laminated body A in an ingot type. The semiconductor wafers to be laminated are cut down in thickness to be divided into two parts when they are cut down from the original silicon semiconductor ingot to be formed of impurity diffused layers 2 comprising impurity on both surfaces with specified processing such as cleaning, etc., furnished. The patch 3 to be bonded to the orifla parts 1a of the semiconductor wafers 1 is to be a flat plate of the same material as that of the semiconductor wafers e.g., a silicon plate. |
