摘要 |
PURPOSE:To obtain a photochemical semiconductor device easily generating hydrogen which is a high energy clean fuel from an aqueous alcohol soln. by joining n-type TiO2 to p-type Si. CONSTITUTION:A photochemical semiconductor device is composed of n-type TiO2 and p-type Si joined to each other. The device is produced by applying a metal such as Ag paste or an In-Ga alloy to an n-type TiO2 plate and a p-type Si plate and joining the plates to each other with the metal (or alloy) in-between. When the photochemical semiconductor device is immersed in an aqueous alcohol soln. and irradiated with light, hydrogen is generated. |