| 摘要 |
PURPOSE: To easily form individual connections between a crystal Cd-Hg-Te CMT and silicon-on-sapphire SOS with a metal pattern, by forming a two-dimensional array of Cd-Hg infrared detectors disposed on lines between circuit lines and connecting the circuits of the circuit lines to adjacent detectors on detector lines. CONSTITUTION: A sapphire base 1 is cut with respect to its crystal axes so as to expose a hexagonal sapphire crystal on its top surface. This provides a sufficiently satisfactory lattice matching for an epitaxially grown Si crystal layer 2. On this layer 2 electronic circuits 2 are formed, a first mask 5 is formed except windows 6, and it is etched until the sapphire surface 7 appears. CMT is grown between the surface 7 and the mask 5 over the substrate. A buffer layer 8, lower and upper CMT layers 9, 10 are formed and wiring pattern is formed with contact openings 13 and connections 14-17, etc.
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